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2N5672JTX.pdf2 Pages, 24 KB, Original
2N5672JTX
New England Semiconductor
NPN HIGH-POWER SILICON TRANSISTOR

Product Details Search Results:

Microsemi.com/2N5672JANTX
{"Collector Current (DC) ":"30 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"30 A","Collector-Emitter Voltage":"120 V","Mounting":"Through Hole","Emitter-Base Voltage":"7 V","Category ":"Bipolar Power","DC Current Gain (Min)":"20","Operating Temperature Classification":"Military","Power Dissipation":"6 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-3","Collector-Base Voltage":"150 V","Rad Hardened":"No","DC Current Gain":"20","Pin Count":"2 +Tab","Number of Elements":"1"}...
1515 Bytes - 12:31:53, 15 January 2025

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