Calogic.net/2N4339
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"JUNCTION","Transistor Application":"SWITCHING","Case Connection":"GATE","Mfr Package Descr...
1371 Bytes - 17:38:40, 29 March 2024
Calogic.net/X2N4339
{"Status":"DISCONTINUED","Feedback Cap-Max (Crss)":"3 pF","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"UNCASED CHIP","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Number of Elements":"1","Case Connection":"GATE","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE SMALL SI...
1313 Bytes - 17:38:40, 29 March 2024
Centralsemi.com/2N4339
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3250 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Term...
1272 Bytes - 17:38:40, 29 March 2024
Centralsemi.com/2N4339LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3250 W","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Operating Mode":"DEPLETION","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shap...
1373 Bytes - 17:38:40, 29 March 2024
Interfet.com/2N4339
{"Mounting Style":"Through Hole","Vds - Drain-Source Breakdown Voltage":"15 V","Transistor Polarity":"N-Channel","Gate-Source Cutoff Voltage":"- 1.8 V","Forward Transconductance - Min":"800 uS","Brand":"InterFET","Id - Continuous Drain Current":"100 pA","Pd - Power Dissipation":"300 mW","Packaging":"Reel","Product Category":"JFET","Rds On - Drain-Source Resistance":"1.7 kOhms","Package \/ Case":"TO-18-3","Drain-Source Current at Vgs=0":"1.5 mA","Vgs - Gate-Source Breakdown Voltage":"- 50 V","Configuration":...
1465 Bytes - 17:38:40, 29 March 2024
Microchip.com/TC52N4339ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1490 Bytes - 17:38:40, 29 March 2024
Microchip.com/TC52N4339ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC\/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS...
1504 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1351 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339G4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1425 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQR
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1373 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQR-A
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1388 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQR-AG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1462 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-46, 3 PIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"DEPLETION","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Trans...
1386 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQR-BG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1464 Bytes - 17:38:40, 29 March 2024
Semelab.co.uk/2N4339-JQRG4
{"Terminal Finish":"GOLD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.3000 W","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1700 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"JUNCTION","DS Breakdown Voltage-Min":"50 V","Transistor Application":"...
1451 Bytes - 17:38:40, 29 March 2024
Solitrondevices.com/2N4339
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"1700 ohm","Feedback Cap-Max (Crss)":"2 pF","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements"...
1196 Bytes - 17:38:40, 29 March 2024
Vishay.com/2N4339
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Series":"-","Voltage - Breakdown (V(BR)GSS)":"50V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"500\u00b5A @ 15V","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Resistance - RDS(On)":"-","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"600mV @ 100nA","Power - Max":"300mW","Current Drain (Id) - Max":"-","Datasheets":"2N4338 thru 2N4341","FET Type":"N-Channel","Mount...
1510 Bytes - 17:38:40, 29 March 2024
Vishay.com/2N4339-2
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Voltage - Breakdown (V(BR)GSS)":"50V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"500\u00b5A @ 15V","Series":"-","Package \/ Case":"TO-206AA, TO-18-3 Metal Can","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"600mV @ 100nA","Current Drain (Id) - Max":"-","FET Type":"N-Channel","Datasheets":"2N4338 thru 2N4341","Power - Max":"300mW","Standard Package":"20","Resistance - RDS(O...
1467 Bytes - 17:38:40, 29 March 2024
Vishay.com/2N4339-E3
{"Category":"Discrete Semiconductor Products","Packaging":"Bulk","Series":"-","Voltage - Breakdown (V(BR)GSS)":"50V","Family":"JFETs (Junction Field Effect)","Current - Drain (Idss) @ Vds (Vgs=0)":"500\u00b5A @ 15V","PCN Assembly\/Origin":"SIL-062-2014-Rev-0 30\/May\/2014","Resistance - RDS(On)":"-","Supplier Device Package":"TO-206AA (TO-18)","Voltage - Cutoff (VGS off) @ Id":"600mV @ 100nA","Power - Max":"300mW","Current Drain (Id) - Max":"-","Datasheets":"2N4338 thru 2N4341","FET Type":"N-Channel","Mount...
1526 Bytes - 17:38:40, 29 March 2024
Vishay.com/FP4339/2N4339
{"Status":"Discontinued","Number of Devices":"2","Semiconductor Material":"Silicon","Package":"N\/A","P(D) Max.(W) Power Dissipation":"300m"}...
678 Bytes - 17:38:40, 29 March 2024