• Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: PLASTIC, TO-226AA, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    717 bytes (84 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: UNSPECIFIED; Package Shape: UNSPECIFIED; Package Style: UNCASED CHIP; Power Dissipation Ambient-Max: 0.4000 W; Status: DISCONTINUED; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: UPPER; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    699 bytes (81 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: ROHS COMPLIANT, PLASTIC, 10D3, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.3500 W; Status: ACTIVE; Terminal Form: WIRE; Terminal Position: BOTTOM; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    611 bytes (71 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Ta); Datasheets: 2N7000/02, NDS7002A Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 50pF @ 25V; Mounting Type: Through Hole; Online Catalog: N-Channel Logic Level Gate FETs; Other Names: 2N7000FS; PCN Assembly/Origin: Assembly/Test Site Transfer 14/Apr/2015; PCN Packaging: TO92 Packing Updates 01/Jul/2015; Package / Case: TO-226-3, TO-92-3 (TO-226AA); Packaging: Bulk; Power - Max: 400mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Product Training Modules: High Voltage Switches for Power Processing; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 2,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    900 bytes (129 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Tc); Datasheets: 2N7000/02, NDS7002A Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 50pF @ 25V; Mounting Type: Through Hole; Online Catalog: N-Channel Standard FETs; Package / Case: TO-226-3, TO-92-3 (TO-226AA); Packaging: Bulk; Power - Max: 400mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Product Training Modules: High Voltage Switches for Power Processing; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 1,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    758 bytes (109 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    550 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    562 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    550 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    562 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    601 bytes (67 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    601 bytes (67 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Lead Free: Yes; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Finish: MATTE TIN; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    710 bytes (84 words) - 01:21, 28 October 2021
  • 0 bytes (0 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: DISCONTINUED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    648 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    642 bytes (73 words) - 01:21, 28 October 2021
  • 0 bytes (0 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Finish: NOT SPECIFIED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    686 bytes (77 words) - 01:21, 28 October 2021
  • 0 bytes (0 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    681 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: DISCONTINUED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    687 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    693 bytes (78 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    681 bytes (78 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Tc); Datasheets: 2N7000/02, NDS7002A Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 50pF @ 25V; Mounting Type: Through Hole; Online Catalog: N-Channel Logic Level Gate FETs; Other Names: 2N7000TA-ND 2N7000TATB 2N7000TATR 2N7000TATR-ND; Package / Case: TO-226-3, TO-92-3 (TO-226AA); Packaging: Tape & Box (TB); Power - Max: 400mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Product Training Modules: High Voltage Switches for Power Processing; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 2,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    839 bytes (123 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    550 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    562 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    550 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    562 bytes (62 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    601 bytes (67 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    601 bytes (67 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    694 bytes (80 words) - 01:21, 28 October 2021
  • Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.3000 A; Drain-source On Resistance-Max: 5 ohm; EU RoHS Compliant: Yes; FET Technology: METAL-OXIDE SEMICONDUCTOR; Lead Free: Yes; Mfr Package Description: TO-92, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.8300 W; Status: ACTIVE-UNCONFIRMED; Terminal Finish: MATTE TIN; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    730 bytes (85 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Tj); Datasheets: 2N7000; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 60pF @ 25V; Mounting Type: Through Hole; Online Catalog: N-Channel Logic Level Gate FETs; PCN Assembly/Origin: Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014; Package / Case: TO-226-3, TO-92-3 (TO-226AA); Packaging: Bulk; Power - Max: 1W; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 1,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    762 bytes (110 words) - 01:21, 28 October 2021
  • Brand: Microchip Technology; Factory Pack Quantity: 2000; Id - Continuous Drain Current: 200 mA; Manufacturer: Microchip; Mounting Style: Through Hole; Package / Case: TO-92-3; Packaging: Reel; Product Category: MOSFET; Rds On - Drain-Source Resistance: 5.3 Ohms; RoHS: Details; Transistor Polarity: N-Channel; Vds - Drain-Source Breakdown Voltage: 60 V
    353 bytes (44 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 300mA (Tc); Datasheets: 2N7000 Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Logic Level Gate; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 40pF @ 10V; Mounting Type: Through Hole; Other Names: 2N7000 AMO 2N7000 AMO-ND 934003460126; Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads; Packaging: Tape & Box (TB); Power - Max: 830mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: TrenchMOS™; Standard Package: 2,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 2V @ 1mA
    729 bytes (105 words) - 01:21, 28 October 2021
  • Category: MOSFET; Description: Value; Manufacturer: NXP Semiconductors; Mounting: Through Hole; Package: 3SPT
    109 bytes (12 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Ta); Datasheets: 2N7000 Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 60pF @ 25V; Mounting Type: Through Hole; Other Names: 2N7000G-ND 2N7000GOS; PCN Obsolescence/ EOL: Multiple Devices 08/Nov/2014 Multiple Devices Revision 26/Nov/2014; Package / Case: TO-226-3, TO-92-3 (TO-226AA); Packaging: Bulk; Power - Max: 350mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 1,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    760 bytes (109 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Ta); Datasheets: 2N7000; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 60pF @ 25V; Mounting Type: Through Hole; Other Names: 2N7000RLRAOSCT; PCN Obsolescence/ EOL: Multiple Devices 03/Jan/2008; Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads; Packaging: Cut Tape (CT); Power - Max: 350mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 10; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    725 bytes (106 words) - 01:21, 28 October 2021
  • Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 200mA (Ta); Datasheets: 2N7000 Datasheet; Drain to Source Voltage (Vdss): 60V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: -; Input Capacitance (Ciss) @ Vds: 60pF @ 25V; Mounting Type: Through Hole; Other Names: 2N7000RLRAGOSTR; PCN Obsolescence/ EOL: Multiple Devices 08/Nov/2014 Multiple Devices Revision 26/Nov/2014; Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads; Packaging: Tape & Reel (TR); Power - Max: 350mW; Product Photos: TO-92-3(StandardBody),TO-226_straightlead; Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V; Series: -; Standard Package: 2,000; Supplier Device Package: TO-92-3; Vgs(th) (Max) @ Id: 3V @ 1mA
    780 bytes (111 words) - 01:21, 28 October 2021