• Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc); Datasheets: FQB6N80; Drain to Source Voltage (Vdss): 800V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: 31nC @ 10V; Input Capacitance (Ciss) @ Vds: 1500pF @ 25V; Mounting Type: Surface Mount; Online Catalog: N-Channel Standard FETs; Other Names: FQB6N80TM-ND FQB6N80TMTR; PCN Packaging: Tape and Box/Reel Barcode Update 07/Aug/2014; Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; Packaging: Tape & Reel (TR); Power - Max: 3.13W; Product Photos: TO-263; Product Training Modules: High Voltage Switches for Power Processing; Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 2.9A, 10V; Series: QFET®; Standard Package: 800; Supplier Device Package: TO-263-2; Vgs(th) (Max) @ Id: 5V @ 250µA
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