{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"5.8A (Tc)","Gate Charge (Qg) @ Vgs":"31nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"1.95 Ohm @ 2.9A, 10V","Datasheets":"FQB6N80","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Tape and B...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5.8(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"800(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...