IRFB3306GPBF MOSFET N-CH 60V 160A TO-220AB
From International Rectifier
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Datasheets | IRFB3306GPbF |
Drain to Source Voltage (Vdss) | 60V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) @ Vds | 4520pF @ 50V |
Mounting Type | Through Hole |
Online Catalog | N-Channel Standard FETs |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015 |
PCN Packaging | Package Drawing Update 19/Aug/2015 |
Package / Case | TO-220-3 |
Packaging | Tube |
Power - Max | 230W |
Product Photos | TO-220AB PKG |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
Series | HEXFET® |
Standard Package | 50 |
Supplier Device Package | TO-220AB |
Vgs(th) (Max) @ Id | 4V @ 150µA |