JANTX2N7237U
11 A, 200 V, P-CHANNEL, Si, POWER, MOSFET, TO-267AB

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)500 mJ
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)11 A
Drain-source On Resistance-Max0.5200 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Power Dissipation Ambient-Max4 W
Pulsed Drain Current-Max (IDM)44 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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