• Avalanche Energy Rating (Eas): 500 mJ; Case Connection: ISOLATED; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 100 V; Drain Current-Max (ID): 34 A; Drain-source On Resistance-Max: 0.0650 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-254AA, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: METAL; Package Shape: SQUARE; Package Style: FLANGE MOUNT; Pulsed Drain Current-Max (IDM): 136 A; Status: ACTIVE; Terminal Finish: TIN LEAD; Terminal Form: PIN/PEG; Terminal Position: SINGLE; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    728 bytes (88 words) - 08:05, 28 November 2021
  • Avalanche Energy Rating (Eas): 500 mJ; Case Connection: DRAIN; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 100 V; Drain Current-Max (ID): 34 A; Drain-source On Resistance-Max: 0.0700 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Package Style: CHIP CARRIER; Pulsed Drain Current-Max (IDM): 136 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: TIN LEAD; Terminal Form: NO LEAD; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    797 bytes (95 words) - 08:05, 28 November 2021
  • Case Connection: ISOLATED; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 100 V; Drain Current-Max (ID): 34 A; Drain-source On Resistance-Max: 0.1320 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: TO-254AA, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: UNSPECIFIED; Package Shape: SQUARE; Package Style: FLANGE MOUNT; Status: ACTIVE; Terminal Finish: NOT SPECIFIED; Terminal Form: PIN/PEG; Terminal Position: SINGLE; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    626 bytes (75 words) - 08:05, 28 November 2021
  • Avalanche Energy Rating (Eas): 500 mJ; Case Connection: ISOLATED; Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 100 V; Drain Current-Max (ID): 34 A; Drain-source On Resistance-Max: 0.1320 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Mfr Package Description: SMD-1, 3 PIN; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Package Style: SMALL OUTLINE; Pulsed Drain Current-Max (IDM): 136 A; Status: ACTIVE; Surface Mount: Yes; Terminal Finish: NOT SPECIFIED; Terminal Form: NO LEAD; Terminal Position: DUAL; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE POWER
    762 bytes (91 words) - 08:05, 28 November 2021