BST52T/R NPN Darlington Transistor
From Philips Semiconductors / NXP Semiconductors
| @I(C) (A) (Test Condition) | 150m |
| @V(CE) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 1.0 |
| I(C) Abs.(A) Collector Current | 500m |
| I(CBO) Max. (A) | 10u |
| Military | N |
| Package | SOT-89 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 100 |
| V(BR)CEO (V) | 80 |
| h(FE) Min. Static Current Gain | 1.0k |
| t(d) Max. (s) Delay time. | 400n |
| t(off) Max. (s) Turn-Off Time | 1.5u |
| t(on) Max. (s) Turn-On Time | 400n® |
