SKM150GB124D Half Bridge IGBT Power Module - With inverse diodes.
From Semikron
| @I(C) (A) (Test Condition) | 4.0m |
| @V(CES) (V) (Test Condition) | 1.2k |
| @V(GE) (Test Condition) | 15 |
| @V(GES) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 800 |
| Circuits Per Package | 1 |
| I(C) Abs.(A) Collector Current | 190 |
| I(CES) Min. (A) | 2.0m |
| I(GES) Max. (A) | 1.0u |
| Package | MODULE-var |
| V(BR)CES (V) | 1.2k |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 2.85 |
| V(GE)th Max. (V) | 6.5 |
| t(d)off Max. (s) Off time | 420n |
| t(f) Max. (s) Fall time. | 60n |
| t(r) Max. (s) Rise time | 35n |
| td(on) Max (s) On time delay | 50n |
