VP1120N5 1.8 A, 200 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220
From Supertex, Inc.
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (Abs) (ID) | 1.8 A |
| Drain Current-Max (ID) | 1.8 A |
| Drain-source On Resistance-Max | 5 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Mfr Package Description | TO-220, 3 PIN |
| Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 45 W |
| Pulsed Drain Current-Max (IDM) | 7 A |
| Qualification Status | COMMERCIAL |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
