IRFBC20-002PBF 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From Vishay Presicion Group
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 84 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 2.2 A |
Drain-source On Resistance-Max | 4.4 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 8 A |
Terminal Finish | NOT SPECIFIED |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |