IRFD120PBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ohm; ID 1.3A; HD-1; PD 1.3W; VGS +/-20V; -55

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions6.29 x 5 x 3.37 mm
Forward Diode Voltage2.5 V
Forward Transconductance0.8 S
Height3.37 mm
Length6.29 mm
Maximum Continuous Drain Current1.3 A
Maximum Drain Source Resistance0.27 Ω
Maximum Drain Source Voltage100 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+175 °C
Maximum Power Dissipation1.3 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +175 °C
Package TypeHVMDIP
Pin Count4
Typical Gate Charge @ VgsMaximum of 16 nC @ 10 V
Typical Input Capacitance @ Vds360 pF @ 25 V
Typical Turn On Delay Time6.8 ns
Typical TurnOff Delay Time18 ns
Width5 mm

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