{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.5V @ 250\u00b5A","Other Drawings":"SOT-23 Top","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"2.8nC @ 4.5V","Product Photos":"SOT23","PCN Assembly\/Origin":"Assembly\/Test Site Addition 01\/Jun\/2015","PCN Design\/Specification":"Wafer Site\/Bond Wire 8\/Apr\/2013","Rds On (Max) @ Id, Vgs":"60 mOhm @ 2.5A, 4.5V","Datasheets":"ZXMN2F34FH","FET Type":"MOSFET N-Channel, Metal Oxide","...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.4(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"20(V)","Pin Count":"3","Packaging":"Tape and Reel","Power Dissipation":"1.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.06(ohm)","Number of Elements":"1"}...