Product Datasheet Search Results:
12 Pages, 383 KB, Original- IRFB3207HR
- Infineon Technologies Ag
- Trans MOSFET N-CH 75V 180A 3-Pin(3+Tab)
12 Pages, 382 KB, Original- IRFB3207PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH 75V 170A 3-Pin(3+Tab) TO-220AB Tube
8 Pages, 288 KB, Original- IRFB3207ZGPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
12 Pages, 484 KB, Original- IRFB3207ZPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 285 KB, Original- AUIRFB3207
- International Rectifier
- MOSFET N-CH 75V 75A TO220AB - AUIRFB3207
12 Pages, 386 KB, Original- IRFB3207
- International Rectifier
- IRFB3207
12 Pages, 383 KB, Original- IRFB3207HR
- International Rectifier
- Trans MOSFET N-CH 75V 180A 3-Pin(3+Tab)
12 Pages, 383 KB, Original- IRFB3207PBF
- International Rectifier
- MOSFET N-CH 75V 180A TO-220AB - IRFB3207PBF
8 Pages, 288 KB, Original- IRFB3207ZGPBF
- International Rectifier
- MOSFET N-CH 75V 120A TO-220AB - IRFB3207ZGPBF
11 Pages, 434 KB, Original- IRFB3207ZPBF
- International Rectifier
- MOSFET N-CH 75V 120A TO-220AB - IRFB3207ZPBF
Product Details Search Results:
Infineon.com/IRFB3207HR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Rad Hardened":"No","Package Type":"TO-220AB","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1462 Bytes - 01:21:43, 18 March 2025
Infineon.com/IRFB3207PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1520 Bytes - 01:21:43, 18 March 2025
Infineon.com/IRFB3207ZGPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1544 Bytes - 01:21:43, 18 March 2025
Infineon.com/IRFB3207ZPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1562 Bytes - 01:21:43, 18 March 2025
Irf.com/AUIRFB3207
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets":"AUIRFB3207","FET Type":"MOSFET N-Chann...
1757 Bytes - 01:21:43, 18 March 2025
Irf.com/IRFB3207
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"910 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0045 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"720 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1502 Bytes - 01:21:43, 18 March 2025
Irf.com/IRFB3207HR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"75(V)","Frequency (Max)":"Not Required MHz","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"...
1659 Bytes - 01:21:43, 18 March 2025
Irf.com/IRFB3207PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"170A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets":"IRFB3207, IR...
2085 Bytes - 01:21:43, 18 March 2025
Irf.com/IRFB3207ZGPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120A (Tc)","Gate Charge (Qg) @ Vgs":"170nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.1 mOhm @ 75A, 10V","Datasheets":"IRFB3207ZGPBF","FET Type":"MOSFET ...
1977 Bytes - 01:21:43, 18 March 2025
Irf.com/IRFB3207ZPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120A (Tc)","Gate Charge (Qg) @ Vgs":"170nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":...
2146 Bytes - 01:21:43, 18 March 2025
