Did you mean: AUIRFB4410Z
Product Datasheet Search Results:
8 Pages, 297 KB, Original- IRFB4410ZGPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
12 Pages, 332 KB, Original- IRFB4410ZPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube
8 Pages, 297 KB, Original- IRFB4410ZGPBF
- International Rectifier
- MOSFET N-CH 100V 97A TO-220AB - IRFB4410ZGPBF
11 Pages, 435 KB, Original- IRFB4410ZPBF
- International Rectifier
- MOSFET N-CH 100V 97A TO-220AB - IRFB4410ZPBF
11 Pages, 842 KB, Original- IRFB4410ZTRLPBF
- International Rectifier
- 75 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 Pages, 842 KB, Original- IRFB4410ZTRRPBF
- International Rectifier
- 75 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Infineon.com/IRFB4410ZGPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"97(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1544 Bytes - 01:24:16, 18 March 2025
Infineon.com/IRFB4410ZPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"97(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"230(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1550 Bytes - 01:24:16, 18 March 2025
Irf.com/AUIRFB4410Z
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Description":"Value","Maximum Continuous Drain Current":"97 A","Package":"3TO-220AB","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"9@10V mOhm","Manufacturer":"International Rectifier"}...
1245 Bytes - 01:24:16, 18 March 2025
Irf.com/IRFB4410ZGPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"97A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"9 mOhm @ 58A, 10V","Datasheets":"IRFB4410ZGPbF","FET Type":"MOSFET N-C...
1975 Bytes - 01:24:16, 18 March 2025
Irf.com/IRFB4410ZPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 150\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"97A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"9 mOhm @ 58A, 10V","Datasheets"...
2020 Bytes - 01:24:16, 18 March 2025
Irf.com/IRFB4410ZTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"242 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-C...
1605 Bytes - 01:24:16, 18 March 2025
Irf.com/IRFB4410ZTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"242 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"390 A","Channel Type":"N-C...
1607 Bytes - 01:24:16, 18 March 2025
