• Channel Type: N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; DS Breakdown Voltage-Min: 60 V; Drain Current-Max (ID): 0.2000 A; Drain-source On Resistance-Max: 5 ohm; FET Technology: METAL-OXIDE SEMICONDUCTOR; Feedback Cap-Max (Crss): 5 pF; Number of Elements: 1; Number of Terminals: 3; Operating Mode: ENHANCEMENT; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND; Package Style: CYLINDRICAL; Power Dissipation Ambient-Max: 0.4000 W; Status: ACTIVE-UNCONFIRMED; Terminal Form: THROUGH-HOLE; Terminal Position: BOTTOM; Transistor Application: SWITCHING; Transistor Element Material: SILICON; Transistor Type: GENERAL PURPOSE SMALL SIGNAL
    654 bytes (73 words) - 06:44, 28 November 2021