Product Datasheet Search Results:

2N6768.pdf25 Pages, 176 KB, Original
2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JAN2N6768.pdf25 Pages, 176 KB, Original
JAN2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JANHC2N6768.pdf25 Pages, 176 KB, Original
JANHC2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JANKC2N6768.pdf25 Pages, 176 KB, Original
JANKC2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JANS2N6768.pdf25 Pages, 176 KB, Original
JANS2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JANTX2N6768.pdf25 Pages, 176 KB, Original
JANTX2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
JANTXV2N6768.pdf25 Pages, 176 KB, Original
JANTXV2N6768
Defense Supply Center Columbus
N-Channel Silicon FET
2N6768.pdf5 Pages, 142 KB, Scan
2N6768
Fairchild Semiconductor
N-Channel Power MOSFETs, 15A, 350V/400V
2N6768.pdf19 Pages, 625 KB, Original
2N6768
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
2N6768J.pdf1 Pages, 41 KB, Scan
2N6768J
Motorola
European Master Selection Guide 1986
2N6768JTX.pdf1 Pages, 41 KB, Scan
2N6768JTX
Motorola
European Master Selection Guide 1986
2N6768JTXV.pdf1 Pages, 41 KB, Scan
2N6768JTXV
Motorola
European Master Selection Guide 1986
2N6768.pdf5 Pages, 191 KB, Scan
2N6768
Harris Semiconductor
Power MOSFET Data Book 1990
JANTX2N6768.pdf5 Pages, 43 KB, Original
JANTX2N6768
Infineon Technologies Ag
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
JANTXV2N6768.pdf5 Pages, 43 KB, Original
JANTXV2N6768
Infineon Technologies Ag
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
2N6768.pdf5 Pages, 43 KB, Original
2N6768
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
2N6768JANTX.pdf7 Pages, 144 KB, Original
2N6768JANTX
International Rectifier
100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
2N6768JANTXV.pdf7 Pages, 144 KB, Original
2N6768JANTXV
International Rectifier
100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
2N6768PBF.pdf5 Pages, 43 KB, Original
2N6768PBF
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
2N6768SCC5205/013.pdf11 Pages, 324 KB, Scan
2N6768SCC5205/013
International Rectifier
400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N6768SCC5205/013PBF.pdf11 Pages, 324 KB, Scan
2N6768SCC5205/013PBF
International Rectifier
400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
JANTX2N6768.pdf5 Pages, 43 KB, Original
JANTX2N6768
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
JANTXV2N6768.pdf5 Pages, 43 KB, Original
JANTXV2N6768
International Rectifier
14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
2N6768.pdf12 Pages, 1094 KB, Original
2N6768
Ixys Corporation
High Voltage Power MOSFETs
JANTX2N6768.pdf9 Pages, 965 KB, Original
JANTX2N6768
Microchip Technology
Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
2N6768.pdf9 Pages, 965 KB, Original
2N6768
Microsemi Commercial Components Group
MOSFET N-CH 400V TO-204AE TO-3
2N6768JANTX.pdf9 Pages, 965 KB, Original
2N6768JANTX
Microsemi
Trans MOSFET 400V 14A 3-Pin(2+Tab) TO-3
2N6768T1.pdf9 Pages, 960 KB, Original
2N6768T1
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N6768TX.pdf4 Pages, 122 KB, Scan
2N6768TX
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
2N6768TXV.pdf4 Pages, 122 KB, Scan
2N6768TXV
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
JAN2N6768.pdf9 Pages, 965 KB, Original
JAN2N6768
Microsemi Hi-rel [mil]
MOSFET N-CH TO-204AE TO-3
JAN2N6768T1.pdf9 Pages, 960 KB, Original
JAN2N6768T1
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANS2N6768.pdf6 Pages, 293 KB, Scan
JANS2N6768
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
JANTX2N6768.pdf9 Pages, 965 KB, Original
JANTX2N6768
Microsemi Hi-rel [mil]
MOSFET N-CH TO-204AE TO-3
JANTX2N6768T1.pdf9 Pages, 960 KB, Original
JANTX2N6768T1
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
JANTXV2N6768.pdf9 Pages, 965 KB, Original
JANTXV2N6768
Microsemi Hi-rel [mil]
MOSFET N-CH
JANTXV2N6768T1.pdf9 Pages, 960 KB, Original
JANTXV2N6768T1
Microsemi Corp.
14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N6768.pdf3 Pages, 175 KB, Scan
2N6768
N/a
FET Data Book
2N6768P.pdf1 Pages, 33 KB, Original
2N6768P
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Dla.mil/2N6768+JAN
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1317 Bytes - 00:35:50, 20 September 2024
Dla.mil/2N6768+JANTX
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1329 Bytes - 00:35:50, 20 September 2024
Dla.mil/2N6768+JANTXV
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1334 Bytes - 00:35:50, 20 September 2024
Infineon.com/JANTX2N6768
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1458 Bytes - 00:35:50, 20 September 2024
Infineon.com/JANTXV2N6768
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1455 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1476 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768JANTX
{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...
1102 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768JANTXV
{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...
1091 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"...
1542 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768SCC5205/013
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"400 V","Num...
1286 Bytes - 00:35:50, 20 September 2024
Irf.com/2N6768SCC5205/013PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termi...
1353 Bytes - 00:35:50, 20 September 2024
Irf.com/JANTX2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1504 Bytes - 00:35:50, 20 September 2024
Irf.com/JANTXV2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1511 Bytes - 00:35:50, 20 September 2024
Microchip.com/JANTX2N6768
1059 Bytes - 00:35:50, 20 September 2024
Microsemi.com/2N6768
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-3","Datasheets":"2N6764,66,68,70","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Drain (Id) @ 25\u00b0C":"14...
1449 Bytes - 00:35:50, 20 September 2024
Microsemi.com/2N6768JANTX
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14 A","Mounting":"Through Hole","Drain-Source On-Volt":"400 V","Power Dissipation":"150 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1440 Bytes - 00:35:50, 20 September 2024
Microsemi.com/2N6768T1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Datasheets":"2N6764,66,68,70T1","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Conti...
1498 Bytes - 00:35:50, 20 September 2024
Microsemi.com/2N6768TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1378 Bytes - 00:35:50, 20 September 2024
Microsemi.com/2N6768TXV
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1385 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JAN2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"*","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Dra...
1542 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JAN2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vds...
1590 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JANS2N6768
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"2","DS Bre...
1262 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JANTX2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-3","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous ...
1560 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JANTX2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-3","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":...
1602 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JANTXV2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-204AE (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - ...
1566 Bytes - 00:35:50, 20 September 2024
Microsemi.com/JANTXV2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vds...
1605 Bytes - 00:35:50, 20 September 2024
Semelab.co.uk/2N6768
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","C...
1413 Bytes - 00:35:50, 20 September 2024
Semelab.co.uk/2N6768-QR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","C...
1434 Bytes - 00:35:50, 20 September 2024
Semelab.co.uk/2N6768R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...
1476 Bytes - 00:35:50, 20 September 2024