Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.35 Ohm @ 500mA, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Package / Case":"TO-220-3, Short Tab","Supplier Device Package":"PLUS220","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IXF(H,V)12N120P/S","Power - Max":"543W","Standard Package":"50","Drain to Source Voltage (Vdss)":"1200V (1.2kV...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.35 Ohm @ 500mA, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Package / Case":"PLUS-220SMD","Supplier Device Package":"PLUS-220SMD","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IXF(H,V)12N120P/S","Power - Max":"543W","Standard Package":"50","Drain to Source Voltage (Vdss)":"1200V (1.2kV)",...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.35 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL"...