Product Datasheet Search Results:
- 2N2218ALJAN
- New England Semiconductor
- NPN SWITCHING SILICON TRANSISTOR
- 2N2218ALJANS
- New England Semiconductor
- NPN SWITCHING SILICON TRANSISTOR
- 2N2218ALJANTX
- New England Semiconductor
- NPN SWITCHING SILICON TRANSISTOR
- 2N2218ALJANTXV
- New England Semiconductor
- NPN SWITCHING SILICON TRANSISTOR
- 2N2218ALJTX
- New England Semiconductor
- BJT, NPN, Dual Transistor, IC 0.8A
- 2N2218ALJTXV
- New England Semiconductor
- BJT, NPN, Dual Transistor, IC 0.8A
- 2N2218ALJV
- Semicoa
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
- 2N2218ALJX
- Semicoa
- 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
Product Details Search Results:
Semicoa.com/2N2218ALJ
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1303 Bytes - 07:56:42, 13 November 2024
Semicoa.com/2N2218ALJV
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1307 Bytes - 07:56:42, 13 November 2024
Semicoa.com/2N2218ALJX
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1309 Bytes - 07:56:42, 13 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
2N2218.pdf | 0.08 | 1 | Request |