Product Datasheet Search Results:

2N2218ALJTX.pdf2 Pages, 31 KB, Original
2N2218ALJTX
New England Semiconductor
BJT, NPN, Dual Transistor, IC 0.8A
2N2218ALJTXV.pdf2 Pages, 31 KB, Original
2N2218ALJTXV
New England Semiconductor
BJT, NPN, Dual Transistor, IC 0.8A

Product Details Search Results:

Semicoa.com/2N2218ALJ
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1303 Bytes - 12:35:54, 14 November 2024
Semicoa.com/2N2218ALJV
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1307 Bytes - 12:35:54, 14 November 2024
Semicoa.com/2N2218ALJX
{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"0.8000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Confi...
1309 Bytes - 12:35:54, 14 November 2024

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